Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory
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October 29, 2013
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Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction...
CX(s) Applied: B3.6
Date: 10/29/2013
Location(s): Michigan
Offices(s): National Energy Technology Laboratory
To develop two completely independent traction inverter systems for use in automobiles. One designed around the commercially available Silicon-Carbide (SiC) power metal-oxide-semiconductor field-effect transistor (MOSFETs), and the other designed around Gallium-Nitride (GaN) power high-electron-mobility transistors (HEMTs).
CX(s) Applied: B3.6
Date: 10/29/2013
Location(s): Michigan
Offices(s): National Energy Technology Laboratory
To develop two completely independent traction inverter systems for use in automobiles. One designed around the commercially available Silicon-Carbide (SiC) power metal-oxide-semiconductor field-effect transistor (MOSFETs), and the other designed around Gallium-Nitride (GaN) power high-electron-mobility transistors (HEMTs).