Categorical Exclusion Determination
Office of NEPA Policy and Compliance
August 25, 2017
Estimated Read Time min
The Power Nitride Doping Innovation Offers Devices Enabling SWITCHES program seeks to develop transformational advances in the process of "selective area doping" (adding a specific impurity to a semiconductor to change its electrical properties) using wide-bandgap semiconductors, gallium nitride, and its alloys. The doping process will enable high-power vertical gallium nitride power electronic devices used in consumer electronics, power supplies, automotive, ship propulsion, and aerospace. The Power Nitride Doping Innovation Offers Devices Enabling SWITCHES Program is composed of 7 small-scale research and development projects conducted by universities, non-profit entities, for-profit entities, and federal laboratories.