High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off CX(s) Applied: B3.6Date: 02/04/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
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February 4, 2014
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High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off
CX(s) Applied: B3.6
Date: 02/04/2014
Location(s): Multiple Locations
Offices(s): Advanced Research Projects Agency-Energy
MicroLink Devices, Inc., in conjunction with the University of Notre Dame, the Virginia Polytechnic Institute and State University, and TriQuint Semiconductor, proposes to conduct laboratory based, small-scale, research and development activities for high powered transistors with reusable features.