High-Quality, Low-Cost GaN Single Crystal Substrates for High-Power Devices CX(s) Applied: B3.6Date: 01/27/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
Office of NEPA Policy and Compliance
January 27, 2014
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High-Quality, Low-Cost GaN Single Crystal Substrates for High-Power Devices
CX(s) Applied: B3.6
Date: 01/27/2014
Location(s): Multiple Locations
Offices(s): Advanced Research Projects Agency-Energy
Fairfield Crystal Technology, in conjunction with Stony Brook University, proposes to conduct laboratory based, small-scale, research and development activities to demonstrate a novel technique for producing gallium-nitride wafers and substrates suitable for fabrication of gallium-nitride high-powered devices.