25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient LightingCX(s) Applied: B3.6Date: 01/15/2010Location(s): New YorkOffice(s): Advanced Research Projects Agency - Energy
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January 15, 2010
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25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient Lighting
CX(s) Applied: B3.6
Date: 01/15/2010
Location(s): New York
Office(s): Advanced Research Projects Agency - Energy
CX(s) Applied: B3.6
Date: 01/15/2010
Location(s): New York
Office(s): Advanced Research Projects Agency - Energy
This project plans to address the vast energy loss and consumption associated with conventional lighting by developing a new route to large, high-quality, single crystals of gallium nitride. These crystals will serve as substrates for light emitting diodes offering high-efficiency lighting.