GaN Homoepitaxial Wafers by Vapor Phase Epitaxy on Low-Cost, High-Quality Ammonothermal GaN Substrates CX(s) Applied: B3.6Date: 01/24/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
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January 24, 2014
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GaN Homoepitaxial Wafers by Vapor Phase Epitaxy on Low-Cost, High-Quality Ammonothermal GaN Substrates
CX(s) Applied: B3.6
Date: 01/24/2014
Location(s): Multiple Locations
Offices(s): Advanced Research Projects Agency-Energy
SixPoint Materials, Inc., in conjunction with the University of Notre Dame, proposes to conduct laboratory based, small-scale, research and development activities for gallium-nitride wafers for high-powered electronic devices.