Vertical GaN Transistors on Bulk GaN Substrates CX(s) Applied: B3.6Date: 02/19/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
Current Aperture Vertical Electron Transistor Device Architectures for Efficient Power Switching CX(s) Applied: B3.6Date: 02/12/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off CX(s) Applied: B3.6Date: 02/04/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
Advanced Manufacturing and Performance Enhancements for Reduced Cost Silicon Carbide MOSFETS CX(s) Applied: B3.6Date: 01/30/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
Transformational GaN Substrate Technology CX(s) Applied: B3.6Date: 01/27/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
Low-Cost Gallium Nitride Vertical Transistor CX(s) Applied: B3.6Date: 01/27/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
High-Quality, Low-Cost GaN Single Crystal Substrates for High-Power Devices CX(s) Applied: B3.6Date: 01/27/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
GaN Homoepitaxial Wafers by Vapor Phase Epitaxy on Low-Cost, High-Quality Ammonothermal GaN Substrates CX(s) Applied: B3.6Date: 01/24/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
Large-Area, Low-Cost Bulk GaN Substrates for Power Electronics CX(s) Applied: B3.6Date: 01/03/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
Energy Efficient, High Productivity Aluminum Electrolytic Cell with Integrated Power Modulation and Heat Recovery CX(s) Applied: B3.6Date: 12/18/2013 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy