Charge-Balanced SiC FETs for Breakthrough Power Conversion CX(s) Applied: B3.6Date: 03/08/2016 Location(s): New YorkOffices(s): Advanced Research Projects Agency-Energy
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March 8, 2016
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Charge-Balanced SiC FETs for Breakthrough Power Conversion
CX(s) Applied: B3.6
Date: 03/08/2016
Location(s): New York
Offices(s): Advanced Research Projects Agency-Energy
Funding will support the project team's small-scale, research and development activities to develop high-voltage, solid-state Silicon Carbide Field-Effect Transistor charge-balanced devices, also known as "Superjunctions."