Vertical GaN Power Transistors Using Controlled Spalling for Substrate Heterogeneity CX(s) Applied: B3.6Date: 02/28/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
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February 28, 2014
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Vertical GaN Power Transistors Using Controlled Spalling for Substrate Heterogeneity
CX(s) Applied: B3.6
Date: 02/28/2014
Location(s): Multiple Locations
Offices(s): Advanced Research Projects Agency-Energy
Columbia University, in conjunction with IBM, Veeco, and Massachusetts Institute of Technology proposes to conduct laboratory based, small-scale, research and development activities to produce vertical gallium-nitride power transistor technology that supports increased voltages and currents compared to conventional technologies.