Development of High-Performance Gallium Nitride Transistors CX(s) Applied: B3.6Date: 01/15/2013 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
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January 15, 2013
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Development of High-Performance Gallium Nitride Transistors
CX(s) Applied: B3.6
Date: 01/15/2013
Location(s): Multiple Locations
Offices(s): Advanced Research Projects Agency-Energy
Ramgoss will perform research to develop a Power electronic Module device using high performance gallium nitride transistors to enable efficient integration of energy resources into the grid, and improve efficiency of heavy industrial electric motor drives.