Categorical Exclusion Determination
Office of NEPA Policy and Compliance
November 30, 2016
Estimated Read Time min
Funding will support the project team's efforts to develop vertical, high-power gallium nitride transistors on free-standing gallium nitride substrates. Specifically, the project team will (1) optimize growth techniques; (2) optimize key device design and geometrical parameters through in-depth 2-D device simulations; (3) perform detailed unit process development; (4) perform process integration for vertical gallium nitride; and (5) characterize device to further refine designs.