CX-101084 Atomically Precise Manufacturing of 2-D Designed Materials

Award Number: DE-EE0008311
CX(s) Applied: A9, B3.6, B3.15
Advanced Manufacturing Office
Location(s): TX
Office(s): Golden Field Office

The U.S. Department of Energy (DOE) is proposing to provide funding to Zyvex Labs to develop 2D designed materials by atomic precision placement of dopant atoms in a single atomic plane of silicon to allow for specific electronic properties to be achieved. Project activities would include initial sample preparation, Scanning Tunneling Microscope lithography, dosing, and molecular beam epitaxy along with sample device inspection which would be performed at Zyvex Labs, in Texas. Surface physics, electrical characterization, and Fourier-transform infrared spectroscopy would be completed at 3D Epitaxial Technologies, also in Texas. The National Institute of Standards and Technology (NIST) laboratory would perform the fabrication and processing of silicon samples in an ultra-high vacuum environment within an existing laboratory at NIST headquarters in Maryland.