Award Number: DE-EE0008151CX(s) Applied: A9, B3.6Solar Energy Technologies OfficeLocation(s): MAOffice(s): Golden Field Office
Office of NEPA Policy and Compliance
July 31, 2017
Estimated Read Time min
Two-dimensional material based layer transfer (2DLT) for low-cost, high-throughput, high-efficiency solar cells
Award Number: DE-EE0008151
CX(s) Applied: A9, B3.6
Solar Energy Technologies Office
Location(s): MA
Office(s): Golden Field Office
The U.S. Department of Energy is proposing to provide funding to Massachusetts Institute of Technology (MIT) to complete a research and development project with the overall goal to develop two-dimensional material based layer transfer for Gallium Arsenide (GaAs) single-junction solar cells in order to increase efficiency and lower costs.
Project activities would include laboratory based research and development, small-scale material fabrication, characterization and transfer, modelling, and project management. The scope of the proposed project includes growth of GaAs on a graphene/GaAs substrate, obtaining high-quality GaAs epitaxial films on graphene, mechanical release of GaAs on graphene without damage, optimization of the baseline GaAs cell, and improving substrate reusability. All activities would take place at the Research Lab of Electronics at MIT in Cambridge, MA. No modifications or new permits, additional licenses and/or authorizations would be necessary. No change in the use, mission or operation of existing facilities would arise out of this effort.