SiC enabled High-Frequency Medium Voltage Drive for High-Speed Motors Award Number: DE-EE0007252 CX(s) Applied: A9, B3.6 Advanced Manufacturing Offices Date: 03/03/2016 Location(s): NY Office(s): Golden Field Office
Office of NEPA Policy and Compliance
March 3, 2016
Estimated Read Time min
SiC enabled High-Frequency Medium Voltage Drive for High-Speed Motors
Award Number: DE-EE0007252
CX(s) Applied: A9, B3.6
Advanced Manufacturing Offices
Date: 03/03/2016
Location(s): NY
Office(s): Golden Field Office
The U.S. Department of Energy (DOE) is proposing to provide federal funding to GE Global Research to develop and test Silicon Carbide (SiC)-based, high-frequency, medium-voltage (MV) drives, driving both a 60 Hertz MV motor as well as higher-speed motors. The proposed project would target both industrial applications and aviation applications.
The proposed project activities would include the design and testing of series-connected SiC modules at Virginia Tech in Blacksburg, VA; the design, build and testing of an intelligent gate drive for SiC modules at University of Tennessee in Knoxville, TN; and the design, fabrication and testing of a SiC MV drive integrated with an induction motor at GE facilities in Pittsburgh, PA, and Niskayuna, NY. The proposed project activities would occur indoors at the existing laboratory facilities listed above. The facilities in which laboratory work would occur are purpose-built for the type of activities being proposed; therefore, no adverse impacts to sensitive resources are expected, and no new permits or permit modifications would be required as a result of the proposed project. The proposed project would not use or create any hazardous material or waste.