"High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method CX(s) Applied: A9, B3.6 Date: 08/20/2012 Location(s): Missouri Offices(s): Golden Field Office"
Office of NEPA Policy and Compliance
August 20, 2012
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"High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution
Growth Method
CX(s) Applied: A9, B3.6
Date: 08/20/2012
Location(s): Missouri
Offices(s): Golden Field Office
The U.S. Department of Energy (DOE) is proposing to provide federal funding to MEMC Electronic Materials, Inc. MEMC would conduct research and development activities for a two phase project to develop a new process method for growing large bulk gallium nitrate (GaN) crystals at low cost with improved functional properties."
CX(s) Applied: A9, B3.6
Date: 08/20/2012
Location(s): Missouri
Offices(s): Golden Field Office
The U.S. Department of Energy (DOE) is proposing to provide federal funding to MEMC Electronic Materials, Inc. MEMC would conduct research and development activities for a two phase project to develop a new process method for growing large bulk gallium nitrate (GaN) crystals at low cost with improved functional properties."