Award Number: DE-EE0008558CX(s) Applied: A9, B3.6Solar Energy Technologies OfficeLocation(s): MAOffice(s): Golden Field Office
Office of NEPA Policy and Compliance
December 26, 2018
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Award Number: DE-EE0008558
CX(s) Applied: A9, B3.6
Solar Energy Technologies Office
Location(s): MA
Office(s): Golden Field Office
The U.S. Department of Energy (DOE) is proposing to provide funding to Massachusetts Institute of Technology (MIT) to develop Gallium arsenide (GaAs) photovoltaic (PV) cells by combining two existing manufacturing processes, remote epitaxy and 2-dimensional layer transfer (2DLT), which allow for reuse of PV substrates, with another process known as Dynamic-hydride vapor phase epitaxy (D-HVPE), which would help lower the costs of production associated with the first two methods. The project would be completed over two Budget Periods (BPs), with a Go/No-Go Decision Point in between each BP.