Harsh Environment Silicon Carbide Sensor Technology for Geothermal InstrumentationCX(s) Applied: B3.6, A9Date: 04/01/2010Location(s): Berkeley, CaliforniaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office
Office of NEPA Policy and Compliance
April 1, 2010
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Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation
CX(s) Applied: B3.6, A9
Date: 04/01/2010
Location(s): Berkeley, California
Office(s): Energy Efficiency and Renewable Energy, Golden Field Office
CX(s) Applied: B3.6, A9
Date: 04/01/2010
Location(s): Berkeley, California
Office(s): Energy Efficiency and Renewable Energy, Golden Field Office
The University of California, Berkeley (UCB) would develop advanced sensor technology for the direct monitoring of geothermal reservoirs using Silicon Carbide (SiC) materials. All project activities would take place either at UCB or the University of Hawaii at Manoa.