Post-growth Recrystallization by Halides for High Throughput CIGS Photovoltaics Award Number: DE-EE0007540 CX(s) Applied: A9, B3.6 Solar Energy Technologies Office Date: 8/15/2016 Location(s): CO Office(s): Golden Field Office
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August 26, 2016
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Post-growth Recrystallization by Halides for High Throughput CIGS Photovoltaics
Award Number: DE-EE0007540
CX(s) Applied: A9, B3.6
Solar Energy Technologies Office
Date: 8/15/2016
Location(s): CO
Office(s): Golden Field Office
The U.S. Department of Energy (DOE) is proposing to provide federal funding to the Colorado School of Mines (CSM) to identify a method for post-growth recrystallization of copperindium-gallium-selenide (CIGS) by halide compounds, demonstrate the kinetics, establish the changes in CIGS structure and optoelectronic properties, assess the effect on devices, demonstrate an implementation suitable for many manufacturing methods, and transfer the technology to three or more commercial manufacturers.
Proposed activities would include fabrication, characterization and modeling of materials and devices, down-selection and refinement of halides and processes, and reporting. These activities would take place on campus at CSM in Golden, CO with fabrication efforts supported by Old Dominion University from their campus in Norfolk, VA. The facilities in which this lab work would occur are purpose-built for the type of activities being proposed; therefore, no new or modified permits, construction of new facilities or physical modifications to existing facilities would occur as a result of the proposed project.