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This capability develops computational tools to enable the implementation of materials into a component design for assessing their performance, lifetime, and reliability through high-fidelity modeling methods.

Catalyst ink and ionomer dispersion formulation, high-throughput fabrication, and scaling studies are recognized core competencies at the National Laboratory of the Rockies.

Electrolyzer research needs ex-situ and in-situ characterization of materials and devices, in addition to synthesis of novel advanced material sets.

This capability makes available experts in the design and growth of complex high-performance III-V semiconductor epitaxial structures and optoelectronic devices, combined with the metal-organic vapor-phase epitaxy (MOVPE) tools.

The CIGS team at NLR has the ability to grow high-quality I-III-VI compound semiconductors for photovoltaic as well as PEC applications. The typical I-III-VI chalcopyrite material is Cu(In,Ga)Se2 (or CIGS).