Precursor-Derived Nanostructured Si-C-X Materials for MHD Electrode Applications CX(s) Applied: A9, B3.6 Date: 06/05/2014 Location(s): Washington Offices(s): National Energy Technology Laboratory
Office of NEPA Policy and Compliance
June 5, 2014
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Precursor-Derived Nanostructured Si-C-X Materials for MHD Electrode Applications
CX(s) Applied: A9, B3.6
Date: 06/05/2014
Location(s): Washington
Offices(s): National Energy Technology Laboratory
Experimental evaluation of the effect of the third element, X, identified using Combinatorial Material Exploration (CME), in SiC on the thermo-electrical properties of Si-C-X materials.
CX(s) Applied: A9, B3.6
Date: 06/05/2014
Location(s): Washington
Offices(s): National Energy Technology Laboratory
Experimental evaluation of the effect of the third element, X, identified using Combinatorial Material Exploration (CME), in SiC on the thermo-electrical properties of Si-C-X materials.