Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California O...
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June 27, 2013
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Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture
CX(s) Applied: B3.6
Date: 06/27/2013
Location(s): California
Offices(s): National Energy Technology Laboratory
The objective of this project is to establish a low-cost patterned sapphire substrate (PSS) LED fabrication process.
CX(s) Applied: B3.6
Date: 06/27/2013
Location(s): California
Offices(s): National Energy Technology Laboratory
The objective of this project is to establish a low-cost patterned sapphire substrate (PSS) LED fabrication process.