PolarJFET - A Novel Vertical GaN Power Transistor Concept CX(s) Applied: B3.6Date: 01/21/2016 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
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January 21, 2016
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PolarJFET - A Novel Vertical GaN Power Transistor Concept
CX(s) Applied: B3.6
Date: 01/21/2016
Location(s): Multiple Locations
Offices(s): Advanced Research Projects Agency-Energy
Cornell proposes to conduct laboratory based, small-scale, research and development activities to develop miniaturized, high-efficiency, gallium-nitride power switches that require substantially lower energy than current silicon based technologies.