Aluminum epilayers for controlled growth and processing of flexible III‐V solar cells on low‐cost substrates Award Number: DE-EE0007363 CX(s) Applied: A9, B3.6 Solar Energy Technologies Office Date: 03/31/2016 Location(s): SD Office(s): Gol...
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June 11, 2016
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Aluminum epilayers for controlled growth and processing of flexible III‐V solar cells on low‐cost substrates
Award Number: DE-EE0007363
CX(s) Applied: A9, B3.6
Solar Energy Technologies Office
Date: 03/31/2016
Location(s): SD
Office(s): Golden Field Office
The U.S. Department of Energy (DOE) is proposing to provide federal funding to the South Dakota School of Mines and Technology (SDSMT) to improve quality, reduce costs, and enhance scalability of III-V single-junction, photovoltaic (PV) devices through the integration of pure Aluminum (Al) epitaxial layers (epilayers).
The proposed project activities would include crystal growth, characterization of materials and electro-optical properties, and fabrication and testing of III-V semiconductors on Al epilayers. Growth and characterization would take place in the Electrical-Engineering/Physics building on the SDSMT campus in Rapid City, SD. Electro-optical measurement of carrier lifetimes would take place at Lakewood Semiconductors’ lab in Lakewood, CO. Supporting growth, characterization, and device processing and testing will take place in the SMFL, NPRL, and AML laboratories at Rochester Institute of Technology (RIT) in Rochester, New York. These facilities are designed for this type of research; therefore, no modifications or new permits, additional licenses and/or authorizations would be necessary. There would be no ground disturbing activities and no equipment would be installed outdoors. There would be no change in the use, mission or operation of existing facilities.