High-Voltage, Bi-Directional MOS-Gated SiC Power Switches for Smart Grid Utility Applications CX(s) Applied: B3.6Date: 01/25/2013 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
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January 25, 2013
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High-Voltage, Bi-Directional MOS-Gated SiC Power Switches for Smart Grid Utility Applications
CX(s) Applied: B3.6
Date: 01/25/2013
Location(s): Multiple Locations
Offices(s): Advanced Research Projects Agency-Energy
Rensselaer Polytechnic Institute, in conjunction with GE Global Research, will perform research to develop a bi-directional power transistor switch composed of materials that is compatible with voltages from any alternating current outlet for utility smart grids.