Categorical Exclusion Determinations: B3.6

Current Aperture Vertical Electron Transistor Device Architectures for Efficient Power Switching CX(s) Applied: B3.6Date: 02/12/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off CX(s) Applied: B3.6Date: 02/04/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
Advanced Manufacturing and Performance Enhancements for Reduced Cost Silicon Carbide MOSFETS CX(s) Applied: B3.6Date: 01/30/2014 Location(s): Multiple LocationsOffices(s): Advanced Research Projects Agency-Energy
Characterization and Analyses of Core Samples From 105-C Disassembly Basin CX(s) Applied: B3.6 Date: 01/30/2014 Location(s): South Carolina Offices(s): Savannah River Operations Office