The National Energy Technology Laboratory (NETL), on behalf of the U.S. Department of Energy (DOE), is pleased to announce eight selections in response to the Solid-State Lighting (SSL) Core Technology Research and Product Development Funding Opportunity Announcements (Round 3). These selections are anticipated to significantly contribute to the goal of the SSL program:

By 2025, develop advanced solid-state lighting technologies that, compared to conventional lighting technologies, are much more energy efficient, longer lasting, and cost competitive by targeting a product system efficiency of 50 percent with lighting that accurately reproduces sunlight spectrum.

Three selections have been made in response to Core Technology Funding Opportunity Announcement (FOA) DE-PS26-06NT42831, and three selections in response to National Laboratory Call DE-PS26-06NT42830. These selections are expected to fill key technology gaps, provide enabling knowledge or data, and represent a significant advancement in the SSL technology base. The total value of selections for Core Technology Research is $7.8 million; the performers of cooperative agreements will provide 20 percent as cost-share.

Two selections have been made in response to Product Development FOA DE-PS26-06NT42832. These selections are focused on the development or improvement of commercially viable materials, devices, or systems. Technical activities are focused on a targeted market application with fully defined price, efficacy, and other performance parameters necessary for success of the proposed product. The total value of Product Development selections is $5.5 million; the performers will provide an average of 29 percent as cost-share.

All eight new selections are covered under the Exceptional Circumstances Determination issued by DOE in June 2004. The selections are listed below (subject to negotiation).

Core Technology Research Selections

Recipient: Yale University
Title: Multicolor, high efficiency, nanotextured LEDs
Team Members: Brown University
Summary: This project aims to merge advanced nitride material science approaches with fundamental optical physics concepts, to greatly enhance light emission efficiency by translating fundamentally new ideas to low-cost practice.

Recipient: Inlustra Technologies
Title: High efficiency non-polar GaN-based LEDs
Team Members: University of California, Santa Barbara
Summary: This project is a multidisciplinary research program to maximize the internal quantum efficiency in blue and particularly green InGaN-based HB-LEDs via the use of non-polar gallium nitride (GaN) crystal planes.

Recipient: Carnegie Mellon University
Title: Novel heterostructure designs for GaN-based LEDs
Team Members: University of Michigan
Summary: CMU and UM seek to improve the state of SSL by solving fundamental issues of semiconductor physics that limit the performance of GaN-based LEDs.

National Laboratory Call Selections for Core Technology Research

Recipient: Sandia National Laboratory
Title: Improved InGaN epitaxial quality by optimizing growth chemistry
Summary: This project addresses improvement of InGaN internal quantum efficiency by systematic study and control of indium incorporation in LED active regions. Improved growth efficiency and control of indium incorporation will also enable better LED manufacturability.

Recipient: Pacific Northwest National Laboratory
Title: High stability organic molecular dopants for maximum power efficiency OLEDs
Summary: This project proposes to develop a new set of molecular dopants for bright, long lived OLEDs by tethering high electron affinity moieties to stable, vacuum-sublimable anchor molecules.

Recipient: Lawrence Berkeley National Laboratory
Title: Investigation of long-term OLED device stability via transmission electron microscopy imaging of cross-sectioned OLED devices
Summary: LBNL proposes a three-year program to improve OLED lifetime and functionality by combining novel fabrication and state-of-the-art characterization techniques to understand the origins of device degradation in white light OLEDs.

Product Development Selections

Recipient: Cree Inc.
Title: LED chips and packaging for 110 lm/W SSL component
Summary: Cree will address LED chip and package efficiency improvements to establish a technology platform that is capable for scaling into low-cost, high efficiency commercial luminaires. At the end of this two-year effort, the applicant will deliver 110 lm/W lamp modules that will emit at 4100K. These modules will be integrated into 1400 lumen luminaires.

Recipient: General Electric Inc.
Title: High quantum efficiency OLED lighting systems
Team Members: Massachusetts Institute of Technology and Stanford University
Summary: GE, MIT, and Stanford will construct high internal quantum efficiency OLEDs that generate the necessary colors on the appropriate length scales on ultra-high barrier plastic substrates for optimal system performance. The goal of the proposed program is to deliver to DOE a >75 lm/W, illumination-quality white light source (2800-6500 CCT, > 85 CRI, >7000 hour life) that has a luminous output comparable to a standard 60W incandescent lamp (900 lumens), with an area < 0.35m².