Presenter: Arpan Chakraborty, Soraa Inc.
This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates. Peak internal quantum efficiency (IQE) values of greater than 80% are achieved over a wide wavelength range at high current densities (J) and high junction temperatures (Tj). Phase I focuses on producing high-quality 405-nanometer (nm) semipolar LEDs and performing IQE measurements, with the goal of demonstrating greater than 70% peak IQE at high J and Tj. Phase I also explores the physical mechanisms behind IQE degradation at high pump densities by measuring the IQE of semipolar LED structures with varying active region designs. Fabrication of initial 405 nm semipolar LEDs is based on high-IQE structures identified by the experimental data.