Rutgers University - First in Class Demonstration of Completely New type of SiC Bipolar Switch (15 kilovolt (kV)-20kV) for Utility Scale Inverters
CX(s) Applied: A9, B3.6
Location(s): New Jersey
Offices(s): Advanced Research Projects Agency-Energy
Funding will support development of the Voltage-Gated Bipolar Transistor (VGBT), a novel silicon carbide (SiC) bipolar power switch that could drastically improve the efficiency, performance, and reliability of power converters used in high voltage, high energy systems, including utility scale inverter applications, solar/wind farm to grid power converters, solid-state power substations, and high voltage direct current transmission lines.